Multi-gate semiconductor device

Semiconductor structures and method for forming the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor structure further includes a first source/drain structure formed adjacent to the fir...

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Bibliographic Details
Main Authors Chen, I-Sheng, Cheng, Chao-Ching, Chen, Tzu-Chiang, Huang, Shih-Syuan, Chiang, Hung-Li
Format Patent
LanguageEnglish
Published 23.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor structures and method for forming the same are provided. The semiconductor structure includes a substrate and first nanostructures and second nanostructures formed over the substrate. The semiconductor structure further includes a first source/drain structure formed adjacent to the first nanostructures and a second source/drain structure formed adjacent to the second nanostructures. The semiconductor structure further includes a first contact plug formed over the first source/drain structure and a second contact plug formed over the second source/drain structure. In addition, a bottom portion of the first contact plug is lower than a bottom portion of the first nanostructures, and a bottom portion of the second contact plug is higher than a top portion of the second nanostructures.
Bibliography:Application Number: US201916681097