Non-volatile memory with multi-level cell array and associated program control method

• Main Authors: Liao, Hung-Yi, Chang, Chia-Fu
• Format: Patent
• Language: English
• Published: 09.11.2021
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A non-volatile memory includes a cell array, a current supply circuit, a path selecting circuit and a verification circuit. The cell array includes plural multi-level memory cells in an m×n array. The cell array is connected with m word lines and n lines. Each of the plural multi-level memory cells is in one of X storage states. The current supply circuit provides plural reference currents. The path selecting circuit is connected with the current supply circuit and the n bit lines. The verification circuit is connected with the path selecting circuit, and generates n verification signals. A first path selector of the path selecting circuit is connected with a path selecting circuit and a first bit line. A first verification device of the verification circuit is connected with the first path selector and generates a first verification signal.