Bipolar transistor and method for forming the same

A bipolar transistor includes an upper sub-collector layer, a collector layer, a base layer, an emitter layer, and a collector electrode. The collector layer is disposed on the upper sub-collector layer. The base layer is disposed on the collector layer. An emitter layer is disposed on the base laye...

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Bibliographic Details
Main Authors Chiu, Jui-Pin, Tsai, Shu-Hsiao, Yu, Chien-Rong
Format Patent
LanguageEnglish
Published 02.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bipolar transistor includes an upper sub-collector layer, a collector layer, a base layer, an emitter layer, and a collector electrode. The collector layer is disposed on the upper sub-collector layer. The base layer is disposed on the collector layer. An emitter layer is disposed on the base layer. The collector electrode is disposed directly on a sidewall of the upper sub-collector layer.
Bibliography:Application Number: US202016734476