Semiconductor memory device

A semiconductor memory device includes wirings arranged in parallel along a first direction, the wirings including first and second wirings that are adjacent and a third wiring adjacent to the second wiring, a first pillar between the first and second wirings and a second pillar between the second a...

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Bibliographic Details
Main Authors Futatsuyama, Takuya, Shikata, Go
Format Patent
LanguageEnglish
Published 02.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor memory device includes wirings arranged in parallel along a first direction, the wirings including first and second wirings that are adjacent and a third wiring adjacent to the second wiring, a first pillar between the first and second wirings and a second pillar between the second and third wirings, the first and second pillars each extending in a second direction crossing the first direction toward the semiconductor substrate, and first and second bit lines connected to the first and second pillars, respectively. A first voltage is applied to the second wiring during a program operation on a first memory cell at an intersection of the second wiring and the first pillar, and a second voltage higher than the first voltage is applied to the second wiring during a program operation on a second memory cell at an intersection of the second wiring and the second pillar.
Bibliography:Application Number: US202017030776