Semiconductor laminate and light-receiving element

A semiconductor laminate includes a substrate composed of InP, a first buffer layer composed of InP containing less than 1×1021 cm−3 Sb and disposed on the substrate, and a second buffer layer composed of InGaAs and disposed on the first buffer layer. The first buffer layer includes a first layer th...

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Bibliographic Details
Main Authors Fuyuki, Takuma, Ishizuka, Takashi, Go, Takashi
Format Patent
LanguageEnglish
Published 19.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor laminate includes a substrate composed of InP, a first buffer layer composed of InP containing less than 1×1021 cm−3 Sb and disposed on the substrate, and a second buffer layer composed of InGaAs and disposed on the first buffer layer. The first buffer layer includes a first layer that has a higher concentration of Sb than the substrate and that is arranged to include a first main surface which is a main surface of the first buffer layer on the substrate side. The second buffer layer includes a second layer that has a lower concentration of Sb than the first layer and that is arranged to include a second main surface which is a main surface of the second buffer layer on the first buffer layer side.
Bibliography:Application Number: US201916676942