Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes following operations. A substrate including an active area is received. A plurality of source/drain regions of a plurality of transistor devices are formed in the active area. An isolation region is inserted between two adjacent source/drain...

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Bibliographic Details
Main Authors Young, Chew-Yuen, Huang, Ching-Fang, Chen, Chih-Liang, Tzeng, Jiann-Tyng, Liu, Jack, Huang, Sing-Kai
Format Patent
LanguageEnglish
Published 12.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device includes following operations. A substrate including an active area is received. A plurality of source/drain regions of a plurality of transistor devices are formed in the active area. An isolation region is inserted between two adjacent source/drain regions of two adjacent transistor devices. The isolation region and the two adjacent source/drain regions cooperatively form two diode devices electrically connected in a back to back manner.
Bibliography:Application Number: US201916703483