Ion implantation system with mixture of arc chamber materials

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber...

Full description

Saved in:
Bibliographic Details
Main Authors Yedave, Sharad N, Despres, Joseph R, Byl, Oleg, Tang, Ying, Sweeney, Joseph D
Format Patent
LanguageEnglish
Published 05.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.
Bibliography:Application Number: US202016904286