Integrated circuit devices including vertical field-effect transistors (VFETs)

Integrated circuit devices including standard cells are provided. The standard cells may include a P-type vertical field effect transistor (VFET) including a first channel region and a first top source/drain region sequentially stacked on a substrate in a vertical direction, an N-type VFET including...

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Bibliographic Details
Main Author Do, Jung Ho
Format Patent
LanguageEnglish
Published 28.09.2021
Subjects
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
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Summary:Integrated circuit devices including standard cells are provided. The standard cells may include a P-type vertical field effect transistor (VFET) including a first channel region and a first top source/drain region sequentially stacked on a substrate in a vertical direction, an N-type VFET including a second channel region and a second top source/drain region sequentially stacked on the substrate in the vertical direction, and a top contact layer contacting both the first top source/drain region and the second top source/drain region.
Bibliography:Application Number: US201916540090