FUSI gated device formation

• Main Authors: Tuan, Hsiao-Chin, Wu, Chia-Hong, Lin, Ta-Wei, Thei, Kong-Beng, Chou, Chien-Chih, Chen, Yi-Huan, Kalnitsky, Alexander
• Format: Patent
• Language: English
• Published: 28.09.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Various embodiments of the present disclosure are directed towards a method for forming a fully silicided (FUSI) gated device, the method including: forming a masking layer onto a gate structure over a substrate, the gate structure comprising a polysilicon layer. Forming a first source region and a first drain region on opposing sides of the gate structure within the substrate, the gate structure is formed before the first source and drain regions. Performing a first removal process to remove a portion of the masking layer and expose an upper surface of the polysilicon layer. The first source and drain regions are formed before the first removal process. Forming a conductive layer directly contacting the upper surface of the polysilicon layer. The conductive layer is formed after the first removal process. Converting the conductive layer and polysilicon layer into a FUSI layer. The FUSI layer is thin and uniform in thickness.