Semiconductor device and method of manufacturing semiconductor device

At edge termination region, a trench is disposed near an interface of an active region. Inside the trench, an embedded insulating film is embedded, and inside the embedded insulating film, a FP long in a direction of depth is disposed. The FP curves outwardly away from an inner sidewall of the trenc...

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Bibliographic Details
Main Authors Onozawa, Yuichi, Yang, Wentao, Sin, Johnny Kin On, Mitsuzuka, Kaname
Format Patent
LanguageEnglish
Published 21.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:At edge termination region, a trench is disposed near an interface of an active region. Inside the trench, an embedded insulating film is embedded, and inside the embedded insulating film, a FP long in a direction of depth is disposed. The FP curves outwardly away from an inner sidewall of the trench as a depth from a base front surface increases. At least near a bottom end of the FP, a distance between the FP and the inner sidewall of trench is greater than a width of the groove. The FP is connected to a front surface electrode that extends on the embedded insulating film. As a result, breakdown voltage can be enhanced, adverse effects of the surface charge can be reduced, and chip size can be further reduced.
Bibliography:Application Number: US201715496035