Etching solution, and method of producing semiconductor element
A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
14.09.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride. |
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Bibliography: | Application Number: US201916725097 |