Spin-orbit torque devices

An example article includes a composite free layer and a conductive channel. The composite free layer includes a high-anisotropy ferromagnetic layer, a non-magnetic transition metal layer adjacent to the high-anisotropy ferromagnetic layer, and an ultra-low damping magnetic insulator. The non-magnet...

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Bibliographic Details
Main Authors Victora, Randall H, Bell, Roy C
Format Patent
LanguageEnglish
Published 14.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:An example article includes a composite free layer and a conductive channel. The composite free layer includes a high-anisotropy ferromagnetic layer, a non-magnetic transition metal layer adjacent to the high-anisotropy ferromagnetic layer, and an ultra-low damping magnetic insulator. The non-magnetic transition metal layer is between the ultra-low damping magnetic insulator and the high-anisotropy ferromagnetic layer. An example spin-orbit torque (SOT) stack may include the example article. Techniques for forming and switching example articles and SOT stacks are described.
Bibliography:Application Number: US201916390793