Wet etch apparatus and method of using the same

A method includes dispensing a chemical solution including charged ions onto a semiconductor substrate to chemically etch a target structure on the semiconductor substrate, and applying an electric field on the semiconductor substrate during dispensing the chemical solution on the semiconductor subs...

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Bibliographic Details
Main Authors Liao, Han-Wen, Lu, Hong-Ting
Format Patent
LanguageEnglish
Published 31.08.2021
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS
SEMICONDUCTOR DEVICES
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Summary:A method includes dispensing a chemical solution including charged ions onto a semiconductor substrate to chemically etch a target structure on the semiconductor substrate, and applying an electric field on the semiconductor substrate during dispensing the chemical solution on the semiconductor substrate, such that the charged ions in the chemical solution are moved in response to the electric field.
Bibliography:Application Number: US201916437775