Thin film resistor with punch-through vias

A device including a thin film resistor (TFR) structure. The TFR structure is accessible by one or more conductive vias that extend vertically from an upper metal layer to completely penetrate a TFR layer positioned thereunder. The conductive vias are coupled to one or more sidewalls of the TFR laye...

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Bibliographic Details
Main Authors Hong, Qi-Zhong, Kande, Dhishan, Ali, Abbas, Shinn, Gregory B
Format Patent
LanguageEnglish
Published 24.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device including a thin film resistor (TFR) structure. The TFR structure is accessible by one or more conductive vias that extend vertically from an upper metal layer to completely penetrate a TFR layer positioned thereunder. The conductive vias are coupled to one or more sidewalls of the TFR layer at or near the sites of penetration. The TFR structure can be manufactured by a method that includes etching a via trench completely through the TFR layer and a dielectric layer above the TFR layer, and filling the via trench with a conductor coupled to a sidewall of the TFR layer.
Bibliography:Application Number: US201916423723