Semiconductor device

A semiconductor device includes a semiconductor layer of first-conductivity-type that has a main surface and that includes a boundary region set in a region between an active region and a current detection region at the main surface, a first body region of second-conductivity-type formed in a surfac...

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Bibliographic Details
Main Author Takaoka, Jun
Format Patent
LanguageEnglish
Published 24.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor layer of first-conductivity-type that has a main surface and that includes a boundary region set in a region between an active region and a current detection region at the main surface, a first body region of second-conductivity-type formed in a surface layer portion of the main surface at the active region, a first trench gate structure formed in the main surface at the active region, a second body region of the second-conductivity-type formed in the surface layer portion of the main surface at the current detection region, a second trench gate structure formed in the main surface at the current detection region, a well region of the second-conductivity-type formed in the surface layer portion of the main surface at the boundary region, and a dummy trench gate structure formed in an electrically floating state in the main surface at the boundary region.
Bibliography:Application Number: US201916593185