Semiconductor device and method of manufacture

An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components...

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Bibliographic Details
Main Authors Lian, Jian-Jou, Chen, Li-Min, Lin, Shun Wu, Huang, Kuo-Bin, Yang, Neng-Jye, Yeh, Ming-Hsi
Format Patent
LanguageEnglish
Published 24.08.2021
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Summary:An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.
Bibliography:Application Number: US201916712201