Method of producing a radiation-emitting component and radiation-emitting component

A method of producing a radiation-emitting component includes: A) providing a dielectric layer that degrades against environmental influences; B) applying a first protective layer to the dielectric layer by an atomic layer deposition method, wherein the first protective layer includes elemental Si o...

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Bibliographic Details
Main Author Rückerl, Andreas
Format Patent
LanguageEnglish
Published 27.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of producing a radiation-emitting component includes: A) providing a dielectric layer that degrades against environmental influences; B) applying a first protective layer to the dielectric layer by an atomic layer deposition method, wherein the first protective layer includes elemental Si or in a compound; and C) applying a second protective layer to the first protective layer, the second protective layer including elemental Si, wherein a layer thickness of the first protective layer is less than or equal to 1 nm so that the first protective layer reduces or prevents a degradation of the dielectric layer.
Bibliography:Application Number: US201716305202