Optoelectronic devices formed over a buffer

An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed...

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Main Authors Nelson, Scott Alan, Frey, Philip Lee, Zeng, Zhaoquan, Fastenau, Joel Mark, Morgan, Aled Owen, Kattner, Michael Vincent, Fetters, Matthew, Edwards, Stuart Andrew, Lubyshev, Dmitri, Liu, Amy Wing Kwan, Krysiak, Hubert
Format Patent
LanguageEnglish
Published 20.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.
Bibliography:Application Number: US201916424292