Semiconductor device, method of manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device according to an embodiment includes: a SiC layer having a first plane, a second plane, a first trench located on a first plane side, an n-type first SiC region, a p-type second SiC region between the first SiC region and the first plane, an n-type third SiC region between the...

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Bibliographic Details
Main Authors Kimoto, Shinichi, Kyogoku, Shinya, Tanaka, Katsuhisa, Iijima, Ryosuke
Format Patent
LanguageEnglish
Published 20.07.2021
Subjects
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