Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures

Metal chemical vapor deposition approaches for fabricating wrap-around contacts, and semiconductor structures having wrap-around metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor feature above a substrate. A dielectric layer is over the semiconduc...

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Bibliographic Details
Main Authors Bergstrom, Daniel B, Wiegand, Christopher J, Leib, Jeffrey S
Format Patent
LanguageEnglish
Published 13.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Metal chemical vapor deposition approaches for fabricating wrap-around contacts, and semiconductor structures having wrap-around metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor feature above a substrate. A dielectric layer is over the semiconductor feature, the dielectric layer having a trench exposing a portion of the semiconductor feature, the portion having a non-flat topography. A metallic contact material is directly on the portion of the semiconductor feature. The metallic contact material is conformal with the non-flat topography of the portion of the semiconductor feature. The metallic contact material has a total atomic composition including 95% or greater of a single metal species.
Bibliography:Application Number: US201716481028