Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the sec...

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Bibliographic Details
Main Authors Chuang, Po-Jen, Kuo, Chia-Ming, Hsiao, Ya-Yin, Wang, Yu-Ren, Yen, Ying-Wei, Chuang, Fu-Jung, Huang, Nan-Yuan
Format Patent
LanguageEnglish
Published 13.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.
Bibliography:Application Number: US201815996539