Methods of manufacturing semiconductor device and semiconductor device
In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a CMP stop layer is formed over the first ILD layer, a trench opening is formed by patterning the CMP stop layer and the first ILD layer, an underlying first process mark is for...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
06.07.2021
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Subjects | |
Online Access | Get full text |
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