Methods of manufacturing semiconductor device and semiconductor device

• Main Authors: Shiu, Feng-Jia, Lu, Wen-Chen, Chen, Ying-Hua
• Format: Patent
• Language: English
• Published: 06.07.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a CMP stop layer is formed over the first ILD layer, a trench opening is formed by patterning the CMP stop layer and the first ILD layer, an underlying first process mark is formed by forming a first conductive layer in the trench opening, a lower dielectric layer is formed over the underlying first process mark, a middle dielectric layer is formed over the lower dielectric layer, an upper dielectric layer is formed over the middle dielectric layer, a planarization operation is performed on the upper, middle and lower dielectric layers so that a part of the middle dielectric layer remains over the underlying first process mark, and a second process mark by the lower dielectric layer is formed by removing the remaining part of the middle dielectric layer.