Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator

• Main Authors: Kimoto, Shinichi, Kyogoku, Shinya, Iijima, Ryosuke, Tanaka, Katsuhisa
• Format: Patent
• Language: English
• Published: 22.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device according to an embodiment includes: a SiC layer having a first plane and a second plane facing the first plane, the SiC layer including a first trench on a first plane side, an n-type first SiC region, a p-type second SiC region, an n-type third SiC region located in this order from the second plane to the first plane, a p-type fourth SiC region between the first SiC region and the first trench, a fifth SiC region between the first SiC region and the first plane, and a sixth SiC region between the fourth SiC region and the fifth SiC region, and the sixth SiC region having an n-type impurity concentration higher than an n-type impurity concentration of the first SiC region; a gate electrode in the first trench; a first electrode on the first plane side; and a second electrode on a second plane side.