Integrated circuit devices including transistors having variable channel pitches

Integrated circuit devices may include active regions spaced apart from each other in a direction. The active regions may include a first pair of active regions, a second pair of active regions, and a third pair of active regions. The first pair of active regions may be spaced apart from each other...

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Bibliographic Details
Main Authors Song, Seung Hyun, Do, Jung Ho
Format Patent
LanguageEnglish
Published 22.06.2021
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Summary:Integrated circuit devices may include active regions spaced apart from each other in a direction. The active regions may include a first pair of active regions, a second pair of active regions, and a third pair of active regions. The first pair of active regions may be spaced apart from each other by a first distance in the direction, the second pair of active regions may be spaced apart from each other by the first distance in the direction, and the third pair of active regions may be spaced apart from each other by the first distance in the direction. The second pair of active regions may be spaced apart from the first pair of active regions and the third pair of active regions by a second distance in the direction, and the first distance may be shorter than the second distance.
Bibliography:Application Number: US201916520717