Method of manufacture of a FinFET device
A semiconductor device and method of manufacture are provided in which an the physical characteristics of a dielectric material are modified in order to provide additional benefits to surrounding structures during further processing. The modification may be performed by implanting ions into the diel...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
22.06.2021
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor device and method of manufacture are provided in which an the physical characteristics of a dielectric material are modified in order to provide additional benefits to surrounding structures during further processing. The modification may be performed by implanting ions into the dielectric material to form a modified region. Once the ions have been implanted, further processing relies upon the modified structure of the modified region instead of the original structure. |
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| AbstractList | A semiconductor device and method of manufacture are provided in which an the physical characteristics of a dielectric material are modified in order to provide additional benefits to surrounding structures during further processing. The modification may be performed by implanting ions into the dielectric material to form a modified region. Once the ions have been implanted, further processing relies upon the modified structure of the modified region instead of the original structure. |
| Author | Tsai, Chia-Ching Chiu, Yi-Wei Hsu, Li-Te |
| Author_xml | – fullname: Tsai, Chia-Ching – fullname: Hsu, Li-Te – fullname: Chiu, Yi-Wei |
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| Notes | Application Number: US201916665474 |
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| PublicationYear | 2021 |
| RelatedCompanies | Taiwan Semiconductor Manufacturing Company, Ltd |
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| Snippet | A semiconductor device and method of manufacture are provided in which an the physical characteristics of a dielectric material are modified in order to... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Method of manufacture of a FinFET device |
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