Electrical contact connection on silicon carbide substrate

A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least on...

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Bibliographic Details
Main Authors Winkler, Hannes, Kramp, Stefan, Krivec, Stefan, Langer, Gregor, Kern, Ronny, Woehlert, Stefan
Format Patent
LanguageEnglish
Published 22.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.
Bibliography:Application Number: US201916422373