Semiconductor device having metal bump and method of manufacturing the same

Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a metal line layer on a semiconductor substrate, and a metal terminal on the metal line layer. The metal line layer includes metal lines, and a passivation layer having a non-planarized top...

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Bibliographic Details
Main Authors Lee, Chanho, Ahn, Jinchan, Kim, Won-young
Format Patent
LanguageEnglish
Published 15.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a metal line layer on a semiconductor substrate, and a metal terminal on the metal line layer. The metal line layer includes metal lines, and a passivation layer having a non-planarized top surface including flat surfaces on the metal lines and a concave surface between the metal lines. The metal terminal is provided on the passivation layer. Opposite lateral surfaces of the metal terminal facing each other are provided on the flat surfaces of the passivation layer.
Bibliography:Application Number: US202016923406