Semiconductor device with treated interfacial layer on silicon germanium

A semiconductor device includes a source region, a drain region, a SiGe channel region, an interfacial layer, a high-k dielectric layer and a gate electrode. The source region and the drain region are over a substrate. The SiGe channel region is laterally between the source region and the drain regi...

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Bibliographic Details
Main Authors Fang, Zi-Wei, Chang, Hsiang-Pi, Chang, Chih-Yu
Format Patent
LanguageEnglish
Published 08.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a source region, a drain region, a SiGe channel region, an interfacial layer, a high-k dielectric layer and a gate electrode. The source region and the drain region are over a substrate. The SiGe channel region is laterally between the source region and the drain region. The interfacial layer forms a nitrogen-containing interface with the SiGe channel region. The high-k dielectric layer is over the interfacial layer. The gate electrode is over the high-k dielectric layer.
Bibliography:Application Number: US202016853602