Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a carbon-containing diffusion barrier, a phosphorus-containing source/drain feature, a gate structure, and a gate spacer. The substrate has a channel region. The carbon-containing diffusion barrier is present in the substrate. The phosphorus-containing so...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
01.06.2021
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Subjects | |
Online Access | Get full text |
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