Semiconductor device and manufacturing method thereof

A semiconductor device includes a substrate, a carbon-containing diffusion barrier, a phosphorus-containing source/drain feature, a gate structure, and a gate spacer. The substrate has a channel region. The carbon-containing diffusion barrier is present in the substrate. The phosphorus-containing so...

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Bibliographic Details
Main Authors Li, Chung-Ting, Li, Hou-Ju, Lin, Yu-Chang, Chen, Hung-Ming, Lu, Jen-Hsiang, Tsao, Chih-Pin
Format Patent
LanguageEnglish
Published 01.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate, a carbon-containing diffusion barrier, a phosphorus-containing source/drain feature, a gate structure, and a gate spacer. The substrate has a channel region. The carbon-containing diffusion barrier is present in the substrate. The phosphorus-containing source/drain feature is present in the substrate, and the carbon-containing diffusion barrier is between the channel region and the phosphorus-containing source/drain feature. The gate is present over the channel region of the substrate. The gate spacer abuts the gate structure and is present over a portion of the phosphorus-containing source/drain feature.
Bibliography:Application Number: US201715489905