Semiconductor devices and methods for forming semiconductor devices

• Main Authors: Hilsenbeck, Jochen, Konrath, Jens Peter
• Format: Patent
• Language: English
• Published: 01.06.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a semiconductor device includes forming a mask layer with a first implantation window on a semiconductor substrate and implanting dopants with a first implantation energy into the semiconductor substrate through the first implantation window to form a first portion of a doping region of the semiconductor device. The mask layer is adapted to form a second implantation window of the mask layer. Further, dopants are implanted with a second implantation energy into the semiconductor substrate through the second implantation window. The second implantation energy differs from the first implantation energy and a lateral dimension of the first implantation window differs from a lateral dimension of the second implantation window.