Monolithic silicon bridge stack including a hybrid baseband die supporting processors and memory

A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the ac...

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Bibliographic Details
Main Authors Wagner, Thomas, Mahnkopf, Reinhard, Stoeckl, Stephan, Wolter, Andreas, Seidemann, Georg, Augustin, Andreas, Waidhas, Bernd, Millou, Laurent
Format Patent
LanguageEnglish
Published 25.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the active surface to the recess-seated die at the recess. A processor die is disposed on the baseband processor die backside surface, and a memory die is disposed on the processor die. The several dice are coupled by through-silicon via groups.
Bibliography:Application Number: US201916515979