Devices with backside metal structures and methods of formation thereof

A semiconductor device includes a first epitaxial layer, a second epitaxial layer disposed below the first epitaxial layer, a conductive layer disposed below and directly contacting the second epitaxial layer, and a plurality of spacers disposed between the second epitaxial layer and the conductive...

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Bibliographic Details
Main Authors Hellmund, Oliver, Baumgartl, Johannes, Neidhart, Thomas Christian, Muri, Ingo, Moder, Iris, Schulze, Hans-Joachim
Format Patent
LanguageEnglish
Published 18.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first epitaxial layer, a second epitaxial layer disposed below the first epitaxial layer, a conductive layer disposed below and directly contacting the second epitaxial layer, and a plurality of spacers disposed between the second epitaxial layer and the conductive layer. The conductive layer includes a metal. The plurality of spacers include a bulk semiconductor material.
Bibliography:Application Number: US201916695999