Semiconductor device having a vertical channel layer with an impurity region surrounding a dielectric core
A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel layer extending along a sidewall of the core insulating layer and a sidewall of the etch stop layer, conductive patterns each surrounding the ch...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
27.04.2021
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel layer extending along a sidewall of the core insulating layer and a sidewall of the etch stop layer, conductive patterns each surrounding the channel layer and stacked to be spaced apart from each other in the first direction, and an impurity region formed in an upper end of the channel layer. |
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| AbstractList | A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel layer extending along a sidewall of the core insulating layer and a sidewall of the etch stop layer, conductive patterns each surrounding the channel layer and stacked to be spaced apart from each other in the first direction, and an impurity region formed in an upper end of the channel layer. |
| Author | Park, In Su Kim, Do Yeon Lee, Ki Hong |
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| Notes | Application Number: US201916360447 |
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| Snippet | A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device having a vertical channel layer with an impurity region surrounding a dielectric core |
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