Semiconductor device and production method thereof

A semiconductor device includes a semiconductor substrate, which includes an element region and an outer-periphery voltage withstanding region. The outer-periphery voltage withstanding region includes a plurality of p-type guard rings surrounding the element region in a multiple manner. Each of the...

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Bibliographic Details
Main Authors Kinpara, Hiromichi, Urakami, Yasushi, Yamashita, Yusuke
Format Patent
LanguageEnglish
Published 20.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate, which includes an element region and an outer-periphery voltage withstanding region. The outer-periphery voltage withstanding region includes a plurality of p-type guard rings surrounding the element region in a multiple manner. Each of the guard rings includes a high concentration region and a low concentration region. A low concentration region of an outermost guard ring includes a first part positioned on an outer peripheral side of its high concentration region. Respective low concentration regions of the guard rings include respective second parts, each positioned in a range sandwiched between corresponding two adjacent high concentration regions among a plurality of concentration regions. A width of the first part on a front surface is wider than widths of the second parts on the front surface.
Bibliography:Application Number: US201716339223