Error recovery in magnetic random access memory after reflow soldering

A method is performed at an electronic device that includes magnetic random access memory (MRAM). The method includes loading the MRAM with data including main data, first error correcting data, and second error correcting data. The MRAM comprises a plurality of MRAM cells characterized by a first m...

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Bibliographic Details
Main Authors Tzoufras, Michail, Gajek, Marcin
Format Patent
LanguageEnglish
Published 20.04.2021
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method is performed at an electronic device that includes magnetic random access memory (MRAM). The method includes loading the MRAM with data including main data, first error correcting data, and second error correcting data. The MRAM comprises a plurality of MRAM cells characterized by a first magnetic anisotropy corresponding to a first error rate at a predefined temperature that exceeds a threshold for correcting errors using only the first error correcting data. The method further includes, after loading the MRAM with the data, heating the MRAM to the predefined temperature and correcting errors in the main data using both the first error correcting data and the second error correcting data. The method further includes after correcting the errors in the main data, erasing, from the MRAM, the second error correcting data and maintaining, on the MRAM, the first error correcting data.
Bibliography:Application Number: US201916367058