Selective emitter for thermophotovoltaic power generator

A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric...

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Bibliographic Details
Main Authors Tokumaru, Shinji, Uno, Tomohiro
Format Patent
LanguageEnglish
Published 13.04.2021
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Summary:A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric layer provided on another surface of the composite layer at an opposite side to the first dielectric layer, the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor.
Bibliography:Application Number: US201716089249