Middle of line structures

The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structu...

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Bibliographic Details
Main Authors Xu, Guowei, Zang, Hui, Tabakman, Keith, Sardesai, Viraj
Format Patent
LanguageEnglish
Published 13.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and/or drain metallization features, and separated from the gate structures by the spacers.
Bibliography:Application Number: US202016742981