MOS transistor with folded channel and folded drift region

• Main Authors: Sadovnikov, Alexei, Haynie, Sheldon Douglas
• Format: Patent
• Language: English
• Published: 13.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a folded drain extended metal oxide semiconductor (DEMOS) transistor. The semiconductor device has a substrate including a semiconductor material with a corrugated top surface. The corrugated top surface has an upper portion, a lower portion, a first lateral portion e...