MOS transistor with folded channel and folded drift region

A semiconductor device includes a folded drain extended metal oxide semiconductor (DEMOS) transistor. The semiconductor device has a substrate including a semiconductor material with a corrugated top surface. The corrugated top surface has an upper portion, a lower portion, a first lateral portion e...

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Bibliographic Details
Main Authors Sadovnikov, Alexei, Haynie, Sheldon Douglas
Format Patent
LanguageEnglish
Published 13.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a folded drain extended metal oxide semiconductor (DEMOS) transistor. The semiconductor device has a substrate including a semiconductor material with a corrugated top surface. The corrugated top surface has an upper portion, a lower portion, a first lateral portion extending from the upper portion to the lower portion, and a second lateral portion extending from the upper portion to the lower portion. The folded DEMOS transistor includes a body in the semiconductor material, a gate on a gate dielectric layer over the body, a drift region contacting the body, and a field plate on a field plate dielectric layer, all extending continuously along the upper portion, the first lateral portion, the second lateral portion, and the lower portion of the corrugated top surface. Methods of forming the folded DEMOS transistor are disclosed.
Bibliography:Application Number: US202016983585