Manufacturing method of package structure
A method including the following steps is provided. A seed layer is formed. Conductive patterns are formed on the seed layer. An etching process with an etchant is performed to remove a portion of the seed layer exposed by the conductive patterns, wherein the etchant includes: 0.1 wt % to 10 wt % of...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
13.04.2021
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A method including the following steps is provided. A seed layer is formed. Conductive patterns are formed on the seed layer. An etching process with an etchant is performed to remove a portion of the seed layer exposed by the conductive patterns, wherein the etchant includes: 0.1 wt % to 10 wt % of phosphoric acid (H3PO4), 0.1 wt % to 10 wt % of hydrogen peroxide (H2O2), 1 ppm to 20000 ppm of a protective agent, 1 ppm to 20000 ppm of a wetting agent, and a balance amount of a solvent. |
---|---|
AbstractList | A method including the following steps is provided. A seed layer is formed. Conductive patterns are formed on the seed layer. An etching process with an etchant is performed to remove a portion of the seed layer exposed by the conductive patterns, wherein the etchant includes: 0.1 wt % to 10 wt % of phosphoric acid (H3PO4), 0.1 wt % to 10 wt % of hydrogen peroxide (H2O2), 1 ppm to 20000 ppm of a protective agent, 1 ppm to 20000 ppm of a wetting agent, and a balance amount of a solvent. |
Author | Tsai, Hui-Jung Chang, Tai-Min Chang, Tsao-Lun Kuo, Hung-Jui |
Author_xml | – fullname: Tsai, Hui-Jung – fullname: Kuo, Hung-Jui – fullname: Chang, Tsao-Lun – fullname: Chang, Tai-Min |
BookMark | eNrjYmDJy89L5WTQ9E3MK01LTC4pLcrMS1fITS3JyE9RyE9TKEhMzk5MT1UoLikqBcmm8jCwpiXmFKfyQmluBkU31xBnD93Ugvz41GKg-tS81JL40GBDA0tzCxNDIycjY2LUAAAR7Srp |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US10978412B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US10978412B23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 14:34:01 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US10978412B23 |
Notes | Application Number: US201916526974 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210413&DB=EPODOC&CC=US&NR=10978412B2 |
ParticipantIDs | epo_espacenet_US10978412B2 |
PublicationCentury | 2000 |
PublicationDate | 20210413 |
PublicationDateYYYYMMDD | 2021-04-13 |
PublicationDate_xml | – month: 04 year: 2021 text: 20210413 day: 13 |
PublicationDecade | 2020 |
PublicationYear | 2021 |
RelatedCompanies | Taiwan Semiconductor Manufacturing Co., Ltd Taiwan Semiconductor Manufacturing Company, Ltd |
RelatedCompanies_xml | – name: Taiwan Semiconductor Manufacturing Co., Ltd – name: Taiwan Semiconductor Manufacturing Company, Ltd |
Score | 3.3152928 |
Snippet | A method including the following steps is provided. A seed layer is formed. Conductive patterns are formed on the seed layer. An etching process with an... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | ANTENNAS, i.e. RADIO AERIALS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
Title | Manufacturing method of package structure |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210413&DB=EPODOC&locale=&CC=US&NR=10978412B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LSwMxEB5KFfWmVdH6IIIseFh037kswr4oQh_YrvRWkmwWqrAtdot_30m6tV70FhKYJAMzky-T-QJw73ucysCRJsYiigCFc5MV2LJ4UTIqn3zGNdvnwO_l7svUm7bgfVsLo3lCvzQ5IlqUQHuvtb9e7i6xEv22cvXI59i1eM4mYWI06BjxCzplI4nCdDRMhrERx2E-NgavoUq0UteyI3TXe-oYrXj207dIVaUsf4eU7Bj2Ryitqk-gJasOHMbbn9c6cNBvEt7YbGxvdQoPfVatVR2CLiwkm6-fyaIkuIEP9ApkQwW7_pRncJelk7hn4pyznw3O8vFuec45tBH4ywsgZYBYQ1oWZ7ZwpfCoHwjXE5T5qFxZ2JfQ_VtO97_BKzhSylJZEcu5hjauT95gcK35rdbKN4XSfp8 |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsXNrwpS8KFov_tShLYrVdduuFb2NpI2BRW64Tr8971knfNF30ICl-Tg7vLL5X4BuLFM6jBbZwrGIgcBCqUKKbCl0qIkDru3CBVsn4kVZcbT1Jy24H1TCyN4Qr8EOSJaVI72Xgt_vdheYgXibeXyjr5h1_whTN1AbtAx4hd0ynLguYPxKBj5su-72UROXlyeaHUMVfPQXe_YnJ2XH51ePV6VsvgdUsID2B2jtKo-hBarutDxNz-vdWEvbhLe2Gxsb3kEtzGpVrwOQRQWSuuvn6V5KeEGPtArSGsq2NUnO4brcJD6kYJzzn42OMsm2-XpJ9BG4M9OQSptxBpMVSnRcoPlpmPZuWHmDrFQuazQetD_W07_v8Er6ERpPJwNH5PnM9jniuMZElU_hzaulV1goK3ppdDQN5obgYw |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Manufacturing+method+of+package+structure&rft.inventor=Tsai%2C+Hui-Jung&rft.inventor=Kuo%2C+Hung-Jui&rft.inventor=Chang%2C+Tsao-Lun&rft.inventor=Chang%2C+Tai-Min&rft.date=2021-04-13&rft.externalDBID=B2&rft.externalDocID=US10978412B2 |