Manufacturing method of package structure

A method including the following steps is provided. A seed layer is formed. Conductive patterns are formed on the seed layer. An etching process with an etchant is performed to remove a portion of the seed layer exposed by the conductive patterns, wherein the etchant includes: 0.1 wt % to 10 wt % of...

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Bibliographic Details
Main Authors Tsai, Hui-Jung, Kuo, Hung-Jui, Chang, Tsao-Lun, Chang, Tai-Min
Format Patent
LanguageEnglish
Published 13.04.2021
Subjects
ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Summary:A method including the following steps is provided. A seed layer is formed. Conductive patterns are formed on the seed layer. An etching process with an etchant is performed to remove a portion of the seed layer exposed by the conductive patterns, wherein the etchant includes: 0.1 wt % to 10 wt % of phosphoric acid (H3PO4), 0.1 wt % to 10 wt % of hydrogen peroxide (H2O2), 1 ppm to 20000 ppm of a protective agent, 1 ppm to 20000 ppm of a wetting agent, and a balance amount of a solvent.
Bibliography:Application Number: US201916526974