Systems and methods for precision fabrication of an orifice within an integrated circuit
A method for fabricating an orifice in a semiconductor which can include: removing a first depth of the semiconductor using a first material removal technique and removing a second depth of the semiconductor using a second material removal technique. The method can optionally include: adding a sacri...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
06.04.2021
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!