SiC single crystal production method and production apparatus

• Main Authors: Seki, Kazuaki, Kishida, Yutaka, Doi, Masayoshi, Sato, Tomohiro, Kusunoki, Kazuhiko, Daikoku, Hironori, Kado, Motohisa
• Format: Patent
• Language: English
• Published: 06.04.2021
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si-C solution having a temperature gradient such that a temperature of the Si-C solution decreases from an interior of the Si-C solution toward a liquid level of the Si-C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si-C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.