Magnetic memory, recording method of magnetic memory, and reading method of magnetic memory

There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell, the memory including first and second tunnel junction elements each having a laminated structure including a reference layer with a fixed magnetizatio...

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Bibliographic Details
Main Authors Ohmori, Hiroyuki, Higo, Yutaka, Uchida, Hiroyuki, Hosomi, Masanori, Hase, Naoki, Sato, Yo
Format Patent
LanguageEnglish
Published 30.03.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell, the memory including first and second tunnel junction elements each having a laminated structure including a reference layer with a fixed magnetization direction, a recording layer with a reversible magnetization direction, and an insulating layer sandwiched between the reference layer and the recording layer, a first selection transistor electrically connected to first ends of the first and second tunnel junction elements, a first wire electrically connected to a second end of the first tunnel junction element, and a second wire electrically connected to a second end of the second tunnel junction element.
Bibliography:Application Number: US201816490142