High voltage monolithic LED chip with improved reliability

Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. Th...

Full description

Saved in:
Bibliographic Details
Main Authors Haberern, Kevin W, Langsdorf, Bennett D, Williams, Bradley E, Breva, Manuel L
Format Patent
LanguageEnglish
Published 23.03.2021
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another to minimize the visibility of the space during operation. The LED chips can also comprise layers structures and compositions that allow improved reliability under high current operation.
Bibliography:Application Number: US201916290084