Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs

• Main Authors: Clevenger, Lawrence A, Saulnier, Nicole A, Penny, Christopher J, Quon, Roger A, Burns, Sean D, Colburn, Matthew E, Mignot, Yann A. M, Kanakasabapathy, Sivananda K
• Format: Patent
• Language: English
• Published: 23.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a β line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a γ line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an α line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a βγβ jog; a βαβ jog; an αβγ jog; a γβα jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.