Extreme ultraviolet lithography patterning with directional deposition
Semiconductor structures fabricated via extreme ultraviolet (EUV) lithographic patterning techniques implementing directional deposition on a EUV resist mask improves selectivity and critical dimension control during the patterning of features in multiple layers of the semiconductor substrate. A sem...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
23.03.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Semiconductor structures fabricated via extreme ultraviolet (EUV) lithographic patterning techniques implementing directional deposition on a EUV resist mask improves selectivity and critical dimension control during the patterning of features in multiple layers of the semiconductor substrate. A semiconductor structure includes a substrate structure having an extreme ultraviolet resist mask disposed over one or more additional layers of the substrate structure. The extreme ultraviolet resist mask defines patterning features. A hard mask layer including a hard mask material is disposed on the extreme ultraviolet resist mask and covers the patterning features of the extreme ultraviolet resist mask. |
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Bibliography: | Application Number: US201916666948 |