Integration of epitaxially grown channel selector with two terminal resistive switching memory element

A magnetic memory array having an epitaxially grown vertical semiconductor selector connected with a two terminal resistive switching memory element via a bottom electrode such as TaN. An electrically conductive contact such as tungsten (W) or TaN can be included between the vertical semiconductor c...

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Bibliographic Details
Main Authors Beery, Dafna, Walker, Andrew J, Levi, Amitay
Format Patent
LanguageEnglish
Published 23.03.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A magnetic memory array having an epitaxially grown vertical semiconductor selector connected with a two terminal resistive switching memory element via a bottom electrode such as TaN. An electrically conductive contact such as tungsten (W) or TaN can be included between the vertical semiconductor channel and the TaN bottom electrode. The electrically conductive contact and the TaN bottom electrode can both be formed by a damascene process wherein an opening is formed in an oxide layer and a metal is deposited into the opening. A chemical mechanical polishing process can then be performed to remove portions of the metal that extend out of the opening in the oxide layer over the oxide surface.
Bibliography:Application Number: US201916685873